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Bulletin PD - 94567 rev.B 08/03
GB50XF120K
IGBT SIXPACK MODULE
Features
Low VCE (on) Non Punch Through IGBT Technology Low Diode VF 10s Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics Positive VCE (on) Temperature Coefficient Ceramic DBC Substrate Low Stray Inductance Design
VCES = 1200V IC = 50A @ TC=80C tsc > 10s @ TJ=150C
ECONO2 6PACK
VCE(on) typ. = 2.45V
Benefits
Benchmark Efficiency for Motor Control Rugged Transient Performance Low EMI, Requires Less Snubbing Direct Mounting to Heatsink PCB Solderable Terminals Low Junction to Case Thermal Resistance UL Approved E78996
Absolute Maximum Ratings
Parameter
VCES IC @ Tc=25C IC @ Tc=80C ICM ILM IF @ Tc=25C IF @ Tc=80C IFM VGE PD @ Tc=25C PD @ Tc=80C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Pulsed Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT and Diode) Maximum Power Dissipation (IGBT and Diode) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Max.
1200 75 50 150 150 75 50 150 20 329 184 150 -40 to +125 AC 2500 (MIN)
Units
V A
V W C V
Thermal and Mechanical Characteristics
Parameter
RJC (IGBT) RJC (Diode) RCS (Module) Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight
Min
2.7 -
Typical
0.05 170
Maximum
0.38 0.70 3.3 -
Units
C/W
N*m g
1
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GB50XF120K
Bulletin PD - 94567 rev.B 08/03
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
BV(CES) V(BR)CES/TJ VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coefficient of Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500A VGE (th) VGE (th)/TJ ICES V FM Gate Threshold Voltage Thresold Voltage temp. coefficient Zero Gate Voltage Collector Current Diode Forward Voltage Drop 4.0 IGES Gate-to-Emitter Leakage Current 0.31 V/C V VGE = 0 IC = 1mA (25C - 125C) IC = 50A VGE = 15V IC = 75A VGE = 15V IC = 50A VGE = 15V TJ = 125C IC =75A VGE = 15V TJ = 125C VCE = VGE IC = 250A mV/C VCE = VGE IC = 1mA (25C-125C) A V VGE = 0 VCE = 1200V VGE = 0 VCE = 1200V Tj = 125C IF = 50A IF = 75A IF = 50A Tj = 125C IF = 75A Tj = 125C nA VGE = 20V 2.45 2.65 2.85 3.15 2.85 3.45 4.9 -12 1000 6.0 100 -
1.95 2.25 2.20 2.60 2.05 2.40 200
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter QG QGE QGC EON EOFF ETOT EON EOFF ETOT td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area 355 35 165 535 55 250 J nC
Min. Typ. Max. Units Conditions IC = 50A VCC = 600A VGE = 15V IC = 50A VCC = 600V VGE = 15V RG = 10 L = 400H Tj = 25C J IC = 50A VCC = 600V VGE = 15V RG = 10 L = 400H Tj = 125C ns IC = 50A VCC = 600V VGE = 15V RG = 10 L =400H Tj = 125C pF VGE = 0 VCC = 30V f = 1Mhz Tj = 150C IC = 150A RG =10 VGE = 15V to 0 10 s Tj = 150C VCC = 900V VP = 1200V RG = 10 VGE = 15V to 0
3600 4635 3740 4780 7340 9415 5050 7100 5525 7750 10575 14850 60 40 570 205 4945 885 100 80 60 665 270 -
FULL SQUARE
Irr
Diode Peak Rev. Recovery Current
-
87
-
A
Tj = 125C VCC = 600V IF = 50A L = 400H VGE = 15V RG = 10
Energy losses include "tail" and diode reverse recovery.
2
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Bulletin PD - 94567 rev.B 08/03
100 90 80 70
ICE (A)
GB50XF120K
100
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
90 80 70
ICE (A)
60 50 40 30 20 10 0 0
60 50 40 30 20 10 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
1
2
3 VCE (V)
4
5
6
0
1
2
3 VCE (V)
4
5
6
Fig. 1 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
20 18 16 14
VCE (V)
Fig. 2 - Typ. IGBT Output Characteristics TJ = 125C; tp = 80s
20 18 16 14
VCE (V)
12 10 8 6 4 2 0 5 10
ICE = 25A ICE = 50A ICE = 100A
12 10 8 6 4 2 0
ICE = 25A ICE = 50A ICE = 100A
15 V GE (V)
20
5
10 VGE (V)
15
20
Fig. 3 - Typical VCE vs. VGE TJ = 25C
10000 9000 8000 EOFF
1000
Fig. 4 - Typical VCE vs. VGE TJ = 125C
tdOFF tF
Swiching Time (ns)
7000
Energy (J)
6000 5000 4000 3000 2000 1000 0 0 20 40 60 IC (A) 80 100 120 EON
100
tdON tR
10 0 20 40 60 80 100 120
IC (A)
Fig. 5 - Typ. Energy Loss vs. IC TJ = 125C; L=400H; VCE= 600V RG= 10; VGE= 15V
Fig. 6 - Typ. Switching Time vs. IC TJ = 125C; L=400H; VCE= 600V RG= 10; VGE= 15V
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3
GB50XF120K
10000 9000 8000
Bulletin PD - 94567 rev.B 08/03
10000
Swiching Time (ns)
7000
1000
Energy (J)
6000 5000 4000 3000 2000 1000 0 0
EOFF EON
tdOFF tF
100
tdON
tR
10
10 20 30 40 50
0
10
20
30
40
50
Fig. 7 - Typ. Energy Loss vs. RG TJ = 125C; L=400H; VCE= 600V ICE= 50A; VGE= 15V
10000
R G ( )
Fig. 8 - Typ. Switching Time vs. RG TJ = 125C; L=400H; VCE= 600V ICE= 50A; VGE= 15V
16 14 12 400V 600V
R G ()
Cies
Capacitance (pF)
1000
Coes
10
VGE (V)
8 6 4 2
100
Cres
10 0 20 40 60 80 100
0 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC)
VCE (V)
Fig. 9- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (C) 100 50 0 0
Ptot (W) IC (A)
Fig. 10 - Typical Gate Charge vs. VGE ICE = 50A; L = 600H
350 300 250 200 150
20
40
60
80
100 120 140 160
T C (C)
Fig. 11 - Maximum DC Collector Current vs. Case Temperature
Fig. 12 - Power Dissipation vs. Case Temperature
4
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Bulletin PD - 94567 rev.B 08/03
1000
GB50XF120K
1000
100 20 s
IC (A)
100
IC A)
10
100 s
1ms 1 10ms DC 0.1 1 10 100 V CE (V) 1000 10000
10
1 10 100 V CE (V) 1000 10000
Fig. 13 - Forward SOA TC = 25C; TJ 150C
700 600 T J = 25C 500
VCE (A)
80 70 60
IF (A)
Fig. 14 - Reverse Bias SOA TJ = 150C; VGE =15V
100 90 25C 125C
T J = 125C
400 300 200 100 0 0 5 10 VGE (V) 15 20
50 40 30 20 10 0 0.0 1.0 2.0 V F (V) 3.0 4.0
Fig. 15 - Typ. Transfer Characteristics VCE=50V; tp=10s
120
Fig. 16 - Typ. Diode Forward Characteristics tp = 80s
120
RG = 4.7
100
RG = 10
100
80
80
IRR (A)
60
IRR (A)
150
RG = 22
60
40
RG = 47
40
20
20
0 0 25 50 75 100 125
0 0 10 20 30 40 50
Fig. 17 - Typical Diode IRR vs. IF TJ = 125C
IF (A)
Fig. 18 - Typical Diode IRR vs. RG TJ = 125C; IF = 50A
R G ( )
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5
GB50XF120K
Bulletin PD - 94567 rev.B 08/03
120
100
80
IRR (A)
60
40
20
0 0 500 1000 1500 2000 2500
Fig. 19- Typical Diode IRR vs. diF/dt ; VCC= 600V; VGE= 15V; ICE= 50A; TJ = 125C
1
diF /dt (A/s)
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3 C 3
Ri (C/W) i (sec) 0.052 0.000444 0.062 0.266 0.005937 0.019420
1
2
Ci= i/Ri Ci= i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10 0.05 0.02
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.01
J
0.01
Ri (C/W) i (sec) 0.116 0.000372 0.201 0.382 0.010642 0.034977
1
2
Ci= i/Ri Ci= i/Ri
0.001
SINGLE PULSE ( THERMAL RESPONSE )
0.0001 1E-006 1E-005 0.0001 0.001 0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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Bulletin PD - 94567 rev.B 08/03
L
GB50XF120K
L DUT
0
VCC
80 V Rg
DUT
1000V
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
VCC ICM
Driver
D C
diode clamp / DUT
L
R=
900V
- 5V DUT / DRIVER
Rg
DUT
VCC
DUT
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
800 700 600 500
90% ICE
80 70 60 50
800 700 600
TEST CURRENT
160 140 120 100 ICE (A) 80
90% test current
500 VCE (V)
ICE (A)
VCE (V)
400 300 200 100 0
Eoff Loss 5% ICE
40 tf
5% V CE
400 300 200
tr 10% test current 5% V CE Eon Loss
30 20 10 0 -10 4.00
60 40 20 0 -20 10.70
100 0 -100 9.90
-100 -1.00
0.00
1.00
2.00
3.00
10.10
10.30 Time (s)
10.50
Time(s)
Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 125C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 125C using Fig. CT.4
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7
GB50XF120K
Bulletin PD - 94567 rev.B 08/03
Dimensions are shown in millimeters (inches)
Econo2 6Pak Package Outline
A!$Ab('dA8PIW@Y
Econo2 6Pak Part Marking Information
GB50XF120K
GB50XF120K
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/02
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